InAs/GaAs self-organized quantum dots on (411)A GaAs by molecular beam epitaxy

被引：13
|
作者：
Kiravittaya, S [1 ]
Songmuang, R [1 ]
Changmuang, P [1 ]
Sopitpan, S [1 ]
Ratanathammaphan, S [1 ]
Sawadsaringkarn, M [1 ]
Panyakeow, S [1 ]
机构：
[1] Chulalongkorn Univ, Fac Engn, Dept Elect Engn, Semicond Device Res Lab, Bangkok 10330, Thailand
来源：
JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷
关键词：
low dimensional structures; nanostructures; surface structure; molecular beam epitaxy; selective epitaxy;
D O I：
10.1016/S0022-0248(01)00978-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Self-organized InAs QDs formation on (4 1 1)A GaAs and on controlled (1 0 0) GnAs substrates were studied by in-situ RHEED observation, AFM measurement and PL spectroscopy. The transition from two-dimensional to three-dimensional growth on (4 1 1)A was observed by RHEED pattern transformation to indicate the critical layer thickness of InAs QDs formation. The result is almost the same as that on (1 0 0). Improvement of QDs alignment having dot size uniformity on (4 1 1)A, was observed by AFM measurement. Enhanced optical properties of QDs on (4 1 1)A was shown by low-temperature PL spectroscopy. Strong PL peak at 966 nm having FWHM of 35 nm was obtained from the 3-stacked QDs on (4 1 1)A. The narrower PL FWHM of QDs peak. on (4 1 1)A comes from the improved uniformity of QDs on (411)A. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1010 / 1015
页数：6
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