A broadband CMOS LNA for WLAN applications

被引：0
|
作者：
Lim, WM [1 ]
Do, MA [1 ]
Ma, JG [1 ]
Yeo, KS [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
2003 IEEE CONFERENCE ON ULTRA WIDEBAND SYSTEMS AND TECHNOLOGIES, CONFERENCE PROCEEDINGS | 2003年
关键词：
CMOS; broadband LNA; gain flatness; reverse isolation; impedance matching;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low noise amplifier (LNA) with excellent gain flatness operating at the frequency range of 5.1GHz to 5.9GHz is designed using a 0.18mum CMOS process. From a supply voltage of 1.5V, the two-stage cascode LNA exhibits a minimum noise figure (NFmin) of 2.59dB to 3.13dB within the required bandwidth. The LNA has a S-11 and S-22 of -25dB and -27dB at 5.5GHz respectively. A reversed isolation (S-12) Of 100dB was achieved. A power gain (S-21 of 14.6dB with variations less than +/- 0.4% was obtained within 5.1GHz and 5.9GHz. Input IP3 and 1dB compression points of the LNA are -9.05dBm and -17.12dBm respectively.
引用
收藏
页码：42 / 46
页数：5
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