Very large-scale gap distances of atmospheric pressure dielectric barrier glow discharge using semiconductor materials

被引：1

作者：

Wang, Weiwei ^{[1
]}

Wang, Xue ^{[1
]}

Fan, Zhihui ^{[1
]}

Liu, Feng ^{[1
]}

Wang, Jingquan ^{[1
]}

Zhao, Zhi ^{[1
]}

Han, Haiyan ^{[1
]}

Huang, Yanbin ^{[1
]}

机构：

[1] Hebei Univ Engn, Sch Math & Phys, Handan 056038, Peoples R China

来源：

EPL | 2021年 / 133卷 / 06期

基金：

中国国家自然科学基金;

关键词：

SURFACE; DEPOSITION; NITROGEN; PLASMAS; OXYGEN; ARGON; FILM; AIR;

D O I：

10.1209/0295-5075/133/65001

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Very large-scale gap distances of atmospheric pressure dielectric barrier discharge (DBD) in glow mode are obtained through semiconductor materials. The maximum value of the gap distance is up to 70mm. Based on the feature of the cathode sheath, Auger neutralization theory, the trapped electron and the accumulated charge in the DBD system, the secondary electron emission is one of the primary reasons for very large-scale gap distances of the DBD to produce glow discharge. Furthermore, the contribution of the effective capacitance, the gas voltage and the discharge power are also discussed. Significant for the research are the development and the practical applications of atmospheric pressure glow discharge in the DBD with very large-scale gap distances. Copyright (C) 2021 EPLA

引用

页数：5

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