First principles band structure calculation and electron transport for strained InAs

被引：2
|
作者：
Hori, Y [1 ]
Miyamoto, Y [1 ]
Ando, Y [1 ]
Sugino, O [1 ]
机构：
[1] NEC Corp Ltd, Kansai Elect Res Labs, Shiga 5200833, Japan
来源：
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/ICIPRM.1998.712412
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have theoretically investigated the band structure of InGaAs and strained InAs on (001) InP by employing the pseudopotentials and the local density approximation. We have extracted band parameters and analyzed electron transport by the Monte Carlo method. 26% higher mobility and 16% higher peak velocity are predicted in strained InAs in comparison with unstrained In0.53Ga0.47As.
引用
收藏
页码：104 / 107
页数：4
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