MBE growth and study of Cr2+:Znse layers for mid-IR lasers

被引：0
|
作者：
Kazakov, I. P. [1 ]
Mirov, S. B. [2 ]
Fedorov, V. V. [2 ]
Gallian, A. [2 ]
Kernal, J. [2 ]
Allman, J. [2 ]
Zabezhaylov, A. O. [3 ]
Dianov, E. M. [3 ]
机构：
[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia
[2] Univ Alabama Birmingham, Dept Phys, Birmingham, AL 35294 USA
[3] Russian Acad Sci, Fiber Opt Res Ctr, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia
来源：
INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 6, NO 5 | 2007年 / 6卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
molecular beam epitaxy; mid-IR lasers; ZnSe : Cr;
D O I：
10.1142/S0219581X07004481
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
MBE growth and photoluminescence study of thin films and bulk Cr2+:ZnSe are reported. We show that MBE provides optically active chromium in ZnSe and is viable for fabrication of optically and electrically pumped laser structures.
引用
收藏
页码：403 / +
页数：2
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