N-type current-voltage characteristics of manganites

被引:4
|
作者
Karpasyuk, V. K. [1 ]
Badelin, A. G. [1 ]
Smirnov, A. M. [1 ]
Sorokin, V. V. [1 ]
Evseeva, A. [1 ]
Doyutova, E. [1 ]
Shchepetkin, A. A. [2 ]
机构
[1] Astrakhan State Univ, 20A Tattischev Str, Astrakhan 414056, Russia
[2] RAS, Inst Met, Ural Div, Ekaterinburg 620016, Russia
关键词
TRANSITION;
D O I
10.1088/1742-6596/200/5/052026
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Experimental data are shown for ceramic samples of La-Sr manganites with substitution of Mn by Zn, containing 0.15, 0.17 or 0.19 f.u. of Mn4+ (under the condition that concentration of oxygen is stoichiometric). Bulk manganites were prepared by the traditional solid state reactions in air. All samples were single phase and crystallized in the orthorhombic structure. Dc I-V characteristics at different temperatures were measured without and with magnetic field, the strength of which was 9200 Oe. All I-V characteristics of manganites reveal the regions with negative differential resistance. The samples of La0.885Sr0.115Mn0.925Zn0.075O3 exhibit novel multi-peak N-type current-voltage characteristics, particularly regular in the presence of magnetic field.
引用
收藏
页数:4
相关论文
共 50 条
  • [41] CURRENT-VOLTAGE CHARACTERISTIC AND ELECTRIC FIELD DISTRIBUTION IN SYSTEMS WITH N-TYPE I-E CHARACTERISTIC
    SOKOLOV, YF
    PHYSICA STATUS SOLIDI, 1969, 33 (01): : 137 - +
  • [42] CURRENT-VOLTAGE CHARACTERISTIC OF COMPENSATED N-TYPE INSB ANALYZED ALLOWING FOR SCATTERING OF ELECTRONS BY OPTICAL PHONONS
    GULYAEV, YV
    CHUSOV, II
    YAREMENKO, NG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (05): : 599 - 603
  • [43] HYSTERESIS OF CURRENT-VOLTAGE CHARACTERISTICS OF GOLD-DOPED N-TYPE GE SAMPLES AND SOME PROPERTIES OF ELECTRIC DOMAINS AT SUBCRITICAL VOLTAGES
    KUROVA, IA
    ZHELUDEVA, SI
    PANIN, MI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (05): : 772 - +
  • [44] Electrical conduction mechanisms in the temperature-dependent current-voltage characteristics of poly(3-hexylthiophene)/n-type Si devices
    Lin, Hong-Zhi
    Lin, Yow-Jon
    MICROELECTRONICS RELIABILITY, 2016, 65 : 60 - 63
  • [45] Ru/Ti schottky contacts on n-type In-P (100): Temperature Dependence of Current-Voltage (I-V) characteristics
    Reddy, Rajagopal, V
    Reddy, Munikrishna Y.
    Padmasuvarna, R.
    Narasappa, Lakshmi T.
    2ND INTERNATIONAL CONFERENCE ON NANOMATERIALS AND TECHNOLOGIES (CNT 2014), 2015, 10 : 666 - 672
  • [46] Current-voltage characteristics of n/n lateral polarity junctions in GaN
    Aleksov, Aleksandar
    Collazo, Ramon
    Mita, Seiji
    Schlesser, Raoul
    Sitar, Zlatko
    APPLIED PHYSICS LETTERS, 2006, 89 (05)
  • [47] THEORY OF S-TYPE CURRENT-VOLTAGE CHARACTERISTICS OF MULTILAYER ISOTYPIC N+-N HETEROSTRUCTURES
    MEZRIN, OA
    TROSHKOV, SI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (07): : 819 - 821
  • [48] Molecular current-voltage characteristics
    Seminario, JM
    Zacarias, AG
    Tour, JM
    JOURNAL OF PHYSICAL CHEMISTRY A, 1999, 103 (39): : 7883 - 7887
  • [49] Nonlinear current-voltage relations in polycrystalline perovskite manganites ceramics
    Philip, J
    Kutty, TRN
    APPLIED PHYSICS LETTERS, 2001, 79 (02) : 209 - 211
  • [50] Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au/n-Type Si Schottky Barrier Diode Modified Using a PEDOT:PSS Interlayer
    Khurelbaatar, Zagarzusem
    Shim, Kyu-Hwan
    Choi, Jaehee
    Hong, Hyobong
    Reddy, V. Rajagopal
    Choi, Chel-Jong
    MATERIALS TRANSACTIONS, 2015, 56 (01) : 10 - 16