Gain spectrum measurement of GaInAsP/InP compressively-strained quantum-wire lasers

被引：6

作者：

Kojima, T ^{[1
]}

Tanaka, S ^{[1
]}

Yasumoto, H ^{[1
]}

Nakaya, H ^{[1
]}

Tamura, S ^{[1
]}

Arai, S ^{[1
]}

机构：

[1] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1998年 / 37卷 / 11B期

关键词：

quantum-wire lasers; GaInAsP/InP; gain spectrum; electron beam lithography; semiconductor lasers;

D O I：

10.1143/JJAP.37.L1386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The gain spectral characteristics of 1.5 mu m wavelength GaInAsP/InP compressively-strained quantum-wire lasers with a wire width of 20 nm and 25 nm, fabricated by electron beam lithography and 2-step organometallic vapor phase epitaxial growth, were measured at a temperature of 100 K and were compared with those of quantum-film lasers fabricated on the same wafer. It was found for the first time that the material gain spectrum of quantum-wire lasers was narrower than that of the quantum-film laser.

引用

页码：L1386 / L1389

页数：4

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