Characterization of low pressure plasma-dc glow discharges (Ar, SF6 and SF6/He) for Si etching

被引：0

作者：

Chiad, Bahaa T. ^{[1
]}

Al-zubaydi, Thair L. ^{[2
]}

Khalaf, Mohammad K. ^{[1
]}

Khudiar, Ausama I. ^{[3
]}

机构：

[1] Univ Baghdad, Coll Sci, Dept Phys, Baghdad, Iraq

[2] Minist Sci & Technol, Dept Mat Sci, Baghdad, Iraq

[3] Minist Sci & Technol, Dept Laser & Optoelect, Baghdad, Iraq

来源：

INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 2010年 / 48卷 / 10期

关键词：

Plasma etching; Si etching; Dry etching; SF6; discharge; Glow discharge; FLUORINE;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Low-pressure plasma reactor which is generated for SF6, SF6/He and Ar gases discharges between two metal electrodes (planer -parallel) using dc-high voltage power supply of 2 kV has been proposed. Paschen's curves show the breakdown voltage of gases as a function of the parameter p*d which is the product of the pressure in the chamber (P=6.5x10(-2)-1.5x10(-1) mbar) and the distance between the two electrodes (d=4.6 cm). The minimum breakdown voltages were found 450 V at pressure of 1.35x10(-1)mbar and 276 V at pressure of 4.3x10(-1) mbar for SF6 and Ar, respectively. Current-voltage characteristics have been studied at different values of pressure (6.5x10(-2)-1.5x10(-1) mbar) and inter-electrodes spacing (3.4, 4.2, 4.6, 5 cm). The SF6, SF6/He and Ar gases discharges plasmas in Si etching have been discussed.

引用

页码：723 / 730

页数：8

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