Electronic bistability in an electrochemically self-assembled array of semiconductor quantum dots

被引:0
|
作者
Bandyopadhyay, S [1 ]
Kouklin, N [1 ]
Menon, L [1 ]
Balandin, A [1 ]
Zaretsky, D [1 ]
Varfolomeev, A [1 ]
Tereshin, S [1 ]
机构
[1] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A novel electronic bistability has been observed in a two-dimensional array of electrochemically self-assembled CdS quantum dots dispersed in alumina. The dots are produced by electrodepositing CdS in 100 Angstrom-sized self-organized pores in a nanoporous alumina film produced by the anodization of an aluminum foil in sulfuric acid. The current-voltage characteristic of the array shows two distinct conductance states. The system switches from one conductance state to another if the de bias is taken past a threshold voltage. This bistable behavior is perfectly repeatable. If the system is left in one conductance state, it remains there indefinitely until switched to the other state by the application of an external de bias. A speculative model is proposed which may explain this behavior. Such an effect may find applications in extremely dense static random access memory.
引用
收藏
页码:371 / 377
页数:7
相关论文
共 50 条
  • [31] Electronic structure of InAs/GaAs self-assembled quantum dots
    Cusack, MA
    Briddon, PR
    Jaros, M
    PHYSICAL REVIEW B, 1996, 54 (04) : R2300 - R2303
  • [32] Epitaxial growth and electronic structure of self-assembled quantum dots
    Petroff, PM
    SINGLE QUANTUM DOTS: FUNDAMENTALS, APPLICATIONS AND NEW CONCEPTS, 2003, 90 : 1 - 24
  • [33] Electronic structure and optical properties of self-assembled quantum dots
    Hawrylak, P
    Wojs, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (11) : 1516 - 1520
  • [34] Electronic structure and optical properties of self-assembled quantum dots
    Hawrylak, P.
    Wojs, A.
    Semiconductor Science and Technology, 1996, 11 (11 S): : 1516 - 1520
  • [35] Electronic states tuning of InAs self-assembled quantum dots
    Garcia, JM
    Mankad, T
    Holtz, PO
    Wellman, PJ
    Petroff, PM
    APPLIED PHYSICS LETTERS, 1998, 72 (24) : 3172 - 3174
  • [36] Size dependence of the magnetic properties of electrochemically self-assembled Fe quantum dots
    L. Menon
    M. Zheng
    H. Zeng
    S. Bandyopadhyay
    D. J. Sellmyer
    Journal of Electronic Materials, 2000, 29 : 510 - 515
  • [37] Size dependence of the magnetic properties of electrochemically self-assembled Fe quantum dots
    Menon, L
    Zheng, M
    Zeng, H
    Bandyopadhyay, S
    Sellmyer, DJ
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (05) : 510 - 514
  • [38] Quantum light source devices of In(Ga)As semiconductor self-assembled quantum dots
    Xiaowu He
    Yifeng Song
    Ying Yu
    Ben Ma
    Zesheng Chen
    Xiangjun Shang
    Haiqiao Ni
    Baoquan Sun
    Xiuming Dou
    Hao Chen
    Hongyue Hao
    Tongtong Qi
    Shushan Huang
    Hanqing Liu
    Xiangbin Su
    Xinliang Su
    Yujun Shi
    Zhichuan Niu
    Journal of Semiconductors, 2019, 40 (07) : 35 - 45
  • [39] Quantum light source devices of In(Ga)As semiconductor self-assembled quantum dots
    He, Xiaowu
    Song, Yifeng
    Yu, Ying
    Ma, Ben
    Chen, Zesheng
    Shang, Xiangjun
    Ni, Haiqiao
    Sun, Baoquan
    Dou, Xiuming
    Chen, Hao
    Hao, Hongyue
    Qi, Tongtong
    Huang, Shushan
    Liu, Hanqing
    Su, Xiangbin
    Su, Xinliang
    Shi, Yujun
    Niu, Zhichuan
    JOURNAL OF SEMICONDUCTORS, 2019, 40 (07)
  • [40] Semiconductor Self-Assembled Quantum Dots: Present Status and Future Trends
    Petroff, Pierre M.
    ADVANCED MATERIALS, 2011, 23 (20) : 2372 - 2376