A SiGe V-band x8 frequency multiplier with high spectral purity

被引：0
|
作者：
Mazor, N. [1 ]
Katz, O. [1 ]
Sheinman, B. [1 ]
Carmon, R. [1 ]
Ben-Yishay, R. [1 ]
Levinger, R. [1 ]
Bruetbart, A. [1 ]
Elad, D. [1 ]
机构：
[1] IBM Haifa Labs, Haifa Univ Campus, IL-31905 Haifa, Israel
来源：
2015 10TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2015年
关键词：
frequency multiplier; harmonic cancelation; SiGe; V-band;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
A compact frequency octupler designed for upper and lower E-band transceivers is implemented in IBM 0.13 mu m SiGe technology. Three frequency doubler stages are used with harmonic rejection conducted at the first two doublers for wide band spectral purity. With a 0 dBm input power, the frequency octupler reaches above 7.5 dBm output power between 56 GHz to 84 GHz with a peak output power of 13.5 dBm. All even harmonics: 2nd, 4th, 6th, 10th, are suppressed by more than 40 dBc across the frequency band. Moreover, the 6th and 10th harmonics are suppressed by over 40 dBc at temperatures between-40 degrees C to 85 degrees C. The circuit enables an extra input option of a frequency quadrupler and occupies 1.23x1.1 mm(2) and consumes 152 mA from a 2.7 V supply.
引用
收藏
页码：77 / 80
页数：4
相关论文
共 50 条
  • [21] A X4 Multiplier MMIC to E-Band Frequencies with High Spectral Purity in 50 nm mHEMT Technology
    Weber, Rainer
    Wagner, Sandrine
    Leuther, Arnulf
    Mikulla, Michael
    2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC, 2023, : 193 - 196
  • [22] A Ka band, low power dissipation, high spectral purity GaAs pHEMT MMIC X4 multiplier.
    Sandhiya, Pallavi
    Mayock, James G. E.
    Buck, Christopher
    2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, 2006, : 1513 - +
  • [23] A V-band High Performance Single-Stage MMIC Frequency Quadrupler
    Biswas, Bijit
    Kumar, G. Arun
    2016 IEEE MTT-S INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC), 2016,
  • [24] Comparison on spectral purity of two SiGe D-Band frequency octuplers in MIMO radar MMICs
    Romstadt, Justin
    Papurcu, Hakan
    Zaben, Ahmad
    Hansen, Steffen
    Aufinger, Klaus
    Pohl, Nils
    2021 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS), 2021,
  • [25] A Scalable 8-Channel Bidirectional V-Band Beamformer in 130 nm SiGe:C BiCMOS Technology
    Malignaggi, A.
    Ko, M.
    Elkhouly, M.
    Kissinger, D.
    2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2017, : 1602 - 1605
  • [26] Measurement of Instantaneous Frequency Scaling for Q/V-Band
    Ebert, Johannes
    Plimon, Karin
    Schmidt, Michael
    Rivera-Castro, Juan
    2015 9th European Conference on Antennas and Propagation (EuCAP), 2015,
  • [27] V-band frequency hopping microwave reflectometer in LHD
    Tokuzawa, T.
    Ejiri, A.
    Kawahata, K.
    Tanaka, K.
    Ito, Y.
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2008, 79 (10):
  • [28] A broadband and miniaturized V-band PHEMT frequency doubler
    Piernas, B
    Hayashi, H
    Nishikawa, K
    Kamogawa, K
    Nakagawa, T
    IEEE MICROWAVE AND GUIDED WAVE LETTERS, 2000, 10 (07): : 276 - 278
  • [29] Design of the radio frequency section of a V-Band Klystron
    Kumar, M. Santosh
    Koley, Chaitali
    Pal, Debashish
    Maity, Santigopal
    Bandyopadhyay, A. K.
    IVEC 2021: 2021 22ND INTERNATIONAL VACUUM ELECTRONICS CONFERENCE, 2021,
  • [30] 220-360-GHz Broadband Frequency Multiplier Chains (x8) in 130-nm BiCMOS Technology
    Ali, Abdul
    Yun, Jongwon
    Kucharski, Maciej
    Ng, Herman Jalli
    Kissinger, Dietmar
    Colantonio, Paolo
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2020, 68 (07) : 2701 - 2715
12345