Metrology for emerging devices and materials

被引:0
|
作者
Vogel, EM [1 ]
机构
[1] Natl Inst Stand & Technol, CMOS, Gaithersburg, MD 20899 USA
关键词
nanoelectronics; emerging devices; beyond CMOS;
D O I
暂无
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
As silicon CMOS technology approaches its limits, new device structures and computational paradigms will be required to replace and augment standard CMOS devices for ULSI circuits. The extreme sensitivity of the electronic proper-ties of these devices to their nanoscale physical properties defines a significant need for precise metrology. This paper provides an overview of the characterization requirements for these technologies.
引用
收藏
页码:650 / 655
页数:6
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