Plasma-based ion implantation and its application to three-dimensional materials

被引:12
|
作者
Yukimura, K [1 ]
机构
[1] Doshisha Univ, Dept Elect Engn, Kyoto 6100321, Japan
来源
SURFACE & COATINGS TECHNOLOGY | 2001年 / 136卷 / 1-3期
关键词
plasma-based ion implantation (PBII); plasma source ion implantation (PSII); plasma immersion ion implantation (PIII); ion implantation; ion sheath; deposition;
D O I
10.1016/S0257-8972(00)01000-8
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
For conformal ion implantation into three-dimensional materials by plasma-based ion implantation (PBII), the production of a uniform, large-volume plasma is required and the ion-sheath evolution must be controlled. The production of a high-density plasma is desirable in order for efficient material processing by PBII, and for reducing the ion-sheath evolution time. In this article, first some newly developed high-density gas and metal/solid plasmas developed in Japan are introduced. Second, the technology for removal of macroparticles is described. Inductively coupled plasmas and helicon-wave-excited plasmas in the radio frequency regions are treated as high-density gas plasmas. Off-resonance microwave plasmas and surface-wave-excited plasmas are also presented. In the area of metal and solid-state plasmas, the shunting are plasma is introduced. Concerning the removal of macroparticles, methods using magnetic filters, magnetic forces, and shield plates are discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1 / 6
页数:6
相关论文
共 50 条
  • [21] Three-dimensional effects for two-dimensional samples in plasma immersion ion implantation
    Mändl, S. (stephan.maendl@iom-leipzig.de), 1600, American Institute of Physics Inc. (96):
  • [22] Plasma-based ion implantation sterilization technique and ion energy estimation
    Tanaka, T
    Watanabe, S
    Shibahara, K
    Yokoyama, S
    Takagi, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2005, 23 (04): : 1018 - 1021
  • [23] A pulsed inductively coupled plasma source for plasma-based ion implantation
    Tuszewski, M
    Scheuer, JT
    Adler, RA
    SURFACE & COATINGS TECHNOLOGY, 1997, 93 (2-3): : 203 - 208
  • [24] Surface engineering of biomedical metallic materials by plasma-based low-energy ion implantation
    Zhu, XM
    Lei, MK
    CURRENT APPLIED PHYSICS, 2005, 5 (05) : 522 - 525
  • [25] Plasma-based ion implantation:: a valuable technology for the elaboration of innovative materials and nanostructured thin films
    Vempaire, D
    Pelletier, J
    Lacoste, A
    Béchu, S
    Sirou, J
    Miraglia, S
    Fruchart, D
    PLASMA PHYSICS AND CONTROLLED FUSION, 2005, 47 : A153 - A166
  • [26] Characteristics of carbon films prepared by plasma-based ion implantation
    Liao, J
    Liu, WM
    Xu, T
    Xue, QJ
    CARBON, 2004, 42 (02) : 387 - 393
  • [27] Prediction of sample temperature during plasma-based ion implantation
    2000, Harbin Inst Technol, China (32):
  • [28] Positive pulse bias method in plasma-based ion implantation
    Ikehata, T
    Shimatsu, K
    Sato, NY
    Mase, H
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 206 : 782 - 786
  • [29] Modification of polymers by plasma-based ion implantation for biomedical applications
    McKenzie, DR
    Newton-McGee, K
    Ruch, P
    Bilek, MM
    Gan, BK
    SURFACE & COATINGS TECHNOLOGY, 2004, 186 (1-2): : 239 - 244
  • [30] Surface modification of PET film by plasma-based ion implantation
    Sakudo, N
    Mizutani, D
    Ohmura, Y
    Endo, H
    Yoneda, R
    Ikenaga, N
    Takikawa, H
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 206 : 687 - 690