Plasma-based ion implantation and its application to three-dimensional materials

被引:12
|
作者
Yukimura, K [1 ]
机构
[1] Doshisha Univ, Dept Elect Engn, Kyoto 6100321, Japan
来源
SURFACE & COATINGS TECHNOLOGY | 2001年 / 136卷 / 1-3期
关键词
plasma-based ion implantation (PBII); plasma source ion implantation (PSII); plasma immersion ion implantation (PIII); ion implantation; ion sheath; deposition;
D O I
10.1016/S0257-8972(00)01000-8
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
For conformal ion implantation into three-dimensional materials by plasma-based ion implantation (PBII), the production of a uniform, large-volume plasma is required and the ion-sheath evolution must be controlled. The production of a high-density plasma is desirable in order for efficient material processing by PBII, and for reducing the ion-sheath evolution time. In this article, first some newly developed high-density gas and metal/solid plasmas developed in Japan are introduced. Second, the technology for removal of macroparticles is described. Inductively coupled plasmas and helicon-wave-excited plasmas in the radio frequency regions are treated as high-density gas plasmas. Off-resonance microwave plasmas and surface-wave-excited plasmas are also presented. In the area of metal and solid-state plasmas, the shunting are plasma is introduced. Concerning the removal of macroparticles, methods using magnetic filters, magnetic forces, and shield plates are discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1 / 6
页数:6
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