Electrical Transport and High-Performance Photoconductivity in Individual ZrS2 Nanobelts

被引：178
|
作者：
Li, Liang [1 ]
Fang, Xiaosheng [1 ]
Zhai, Tianyou [1 ]
Liao, Meiyong [4 ]
Gautam, Ujjal K. [1 ]
Wu, Xingcai [2 ,3 ]
Koide, Yasuo [4 ]
Bando, Yoshio [1 ]
Golberg, Dmitri [1 ]
机构：
[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan
[2] Nanjing Univ, Key Lab Mesoscop Chem MOE, State Key Lab Coordinat Chem, Nanjing 210093, Peoples R China
[3] Nanjing Univ, Sch Chem & Chem Engn, Nanjing 210093, Peoples R China
[4] Natl Inst Mat Sci, Sensor Mat Ctr, Tsukuba, Ibaraki 3050044, Japan
来源：
ADVANCED MATERIALS | 2010年 / 22卷 / 37期
基金：
中国国家自然科学基金;
关键词：
FIELD-EMISSION PERFORMANCE; ULTRAVIOLET PHOTODETECTORS; FILMS; NANOPARTICLES; NANOWIRES; OXIDE; MOS2;
D O I：
10.1002/adma.201001413
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Individual ZrS2-nanobelt field-effect transistors were fabricated using a photolithography process. Temperature-dependent electrical transport revealed different electrical conductivity mechanism at different working temperature regions. ZrS2-nanobelt photodetectors demonstrated a high-performance visible-light photoconductivity.
引用
收藏
页码：4151 / +
页数：7
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