Electrical conduction in ion implanted Nylon-6 films

被引:1
|
作者
Balasubramanian, V
Kelkar, DS
Kurup, MB
机构
[1] TATA INST FUNDAMENTAL RES,BOMBAY 400005,MAHARASHTRA,INDIA
[2] INST SCI,DEPT PHYS,BOMBAY 400032,MAHARASHTRA,INDIA
关键词
D O I
10.1016/0168-583X(95)01401-2
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The changes in the electrical properties of Nylon-6 films after implantation with both alkali ions (Li+, Na+ and K+) and an inert ion (Ar+) have been investigated for different implantation fluences and energies. A decrease in the resistivity of the sample by about six orders of magnitude is observed in many of the implanted samples. The ESR signals from these samples show the formation of free radicals dependent on ion fluence and energy. The temperature dependence of the resistivity is consistent with a model of carrier transport due to carriers hopping between electrically isolated conducting islands produced by ion implantation. No systematic and significant difference was observed in the behaviour of samples due to implantation with alkali ions vis-`a-vis the inert ion.
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页码:257 / 260
页数:4
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