Fabrication of InGaAs quantum wire structures by As2 flux in molecular beam epitaxy

InGaAs/InAlAs quantum wire structures on V-grooved substrates have been fabricated under As-2 flux by molecular beam epitaxy. Under As-2 dux, a smaller number of In atoms migrate than those under As-4 flux to the V-groove bottom fi om the sidewall surface. The InAlAs layer on the V-grooved InP substrates grown under As-2 flux preserves the V-shape, whereas the V-shape cannot be preserved and the quantum wire structures cannot be fabricated under As4 flux. The InGaAs quantum wires grown under As-2 flux have good optical property.