Fabrication of InGaAs quantum wire structures by As2 flux in molecular beam epitaxy

被引：0

作者：

Sugaya, T ^{[1
]}

Tanuma, Y ^{[1
]}

Nakagawa, T ^{[1
]}

Sugiyama, Y ^{[1
]}

Yonei, K ^{[1
]}

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

来源：

1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAs/InAlAs quantum wire structures on V-grooved substrates have been fabricated under As-2 flux by molecular beam epitaxy. Under As-2 dux, a smaller number of In atoms migrate than those under As-4 flux to the V-groove bottom fi om the sidewall surface. The InAlAs layer on the V-grooved InP substrates grown under As-2 flux preserves the V-shape, whereas the V-shape cannot be preserved and the quantum wire structures cannot be fabricated under As4 flux. The InGaAs quantum wires grown under As-2 flux have good optical property.

引用

页码：75 / 78

页数：4

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