Growth of GaAs and InGaAs nanowires by utilizing selective area MOVPE

被引：0

作者：

Noborisaka, J ^{[1
]}

Motohisa, J ^{[1
]}

Takeda, J ^{[1
]}

Inari, M ^{[1
]}

Miyoshi, Y ^{[1
]}

Ooike, N ^{[1
]}

Fukui, T ^{[1
]}

机构：

[1] Hokkaido Univ, Res ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608626, Japan

来源：

2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings | 2004年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the fabrication of GaAs and InGaAs hexagonal nanowires surrounded by {110} vertical facets on GaAs (111)B and InP (111)B substrates using selective area (SA) MOVPE growth. The substrate for SA-growth was partially covered with thin SiO2 and circular mask opening with diameter d(0) of 50-200 nm was defined. After SA-MOVPE, GaAs or InGaAs nanowires with the typical diameter d ranging from 50 nm to 200 nm and height 2 mu m to 9 mu m was formed vertically on the substrates, depending on the growth conditions and the pattern geometry. Possible growth mechanism is also discussed.

引用

页码：647 / 650

页数：4

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