Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 ((2)over-bar01)

被引：77

作者：

Jia, Ye ^{[1
]}

Zeng, Ke ^{[1
]}

Wallace, Joshua S. ^{[2
]}

Gardella, Joseph A. ^{[2
]}

Singisetti, Uttam ^{[1
]}

机构：

[1] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

[2] SUNY Buffalo, Dept Chem, Buffalo, NY 14260 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 10期

关键词：

OFFSETS; GROWTH; TRANSPARENT; EDGE;

D O I：

10.1063/1.4915262

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The energy band alignment between atomic layer deposited (ALD) SiO2 and beta-Ga2O3 ((2) over bar 01) is calculated using x-ray photoelectron spectroscopy and electrical measurement of metal-oxide semiconductor capacitor structures. The valence band offset between SiO2 and Ga2O3 is found to be 0.43 eV. The bandgap of ALD SiO2 was determined to be 8.6 eV, which gives a large conduction band offset of 3.63 eV between SiO2 and Ga2O3. The large conduction band offset makes SiO2 an attractive gate dielectric for power devices. (C) 2015 AIP Publishing LLC.

引用

页数：4

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