Effect of Nitrogen Implantation on the Performance of TOHOS Total Ionizing Dose Radiation Sensor Device

被引：0

作者：

Hsieh, Wen-Ching ^{[1
]}

Lee, Hao-Tien Daniel ^{[2
]}

Jong, Fuh-Cheng ^{[3
]}

Wu, Shich-Chuan ^{[4
]}

机构：

[1] Minghsin Univ Sci & Technol, Dept Optoelect Syst Engn, Xinxing Rd 1, Xinfeng 30401, Taiwan

[2] Treasure Giant Technol Inc, 3F-1,42 Lyushuei Rd, Hsinchu 30068, Taiwan

[3] Southern Taiwan Univ Sci & Technol, Dept Elect Engn, 1 Nan Tai St, Tainan 710, Taiwan

[4] Natl Nano Device Labs, 26,Prosper Rd 1,Hsinchu Sci Pk, Hsinchu 30078, Taiwan

来源：

SENSORS AND MATERIALS | 2016年 / 28卷 / 05期

关键词：

high k; sensor; TID; SONOS; SOHOS; MOS; radiation; CHARGE;

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The nitrogen-implanted titanium nitride silicon oxide hafnium oxide silicon oxide silicon (hereafter, N-TOHOS) device can be a candidate for total ionizing dose (TID) radiation sensor application. In this study, we mainly focus on N implantation for the improvement of the TID radiation-induced charging effect performance of the N-TOHOS device. The TID radiation-induced charging effect performance of the N-TOHOS device is improved by the implantation of nitrogen in the HfO2 trapping layer. Experimental data show that the radiation-induced charge density of a typical N-TOHOS device is approximately 4-5 times that of a conventional metal oxide nitride oxide silicon (MONOS) device reported previously. The charge retention reliability after 5 mrad gamma irradiation of the N-TOHOS device with a high implantation dose and a low implantation energy can be improved. The N-TOHOS device described in this study has demonstrated its potential for nonvolatile TID radiation sensing application in the future.

引用

页码：577 / 584

页数：8

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