STM Tip-Induced Switching in Molybdenum Disulfide-Based Atomristors

被引：2

作者：

Thompson, Jesse E. ^{[1
,2
]}

Blue, Brandon T. ^{[1
,2
]}

Smalley, Darian ^{[1
,2
]}

Torres-Davila, Fernand ^{[1
,2
]}

Tetard, Laurene ^{[1
,2
]}

Robinson, Jeremy T. ^{[3
]}

Ishigami, Masahiro ^{[1
,2
]}

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32826 USA

[2] Univ Cent Florida, Nanosci Technol Ctr, Orlando, FL 32826 USA

[3] Naval Res Lab, Washington, DC 20375 USA

来源：

MRS ADVANCES | 2019年 / 4卷 / 48期

关键词：

2D materials; devices; graphene; scanning tunneling microscopy (STM); LOW-POWER; GRAPHENE; MEMRISTOR; GRAPHITE; MOS2;

D O I：

10.1557/adv.2019.322

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning tunneling microscopy and spectroscopy (STM/STS) are used to electronically switch atomically-thin memristors, referred to as "atomristors", based on a graphene/molybdenum disulfide (MoS2)/Au heterostructure. A gold-assisted exfoliation method was used to produce near-millimeter (mm) scale MoS2 on Au thin-film substrates, followed by transfer of a separately exfoliated graphene top layer. Our results reveal that it is possible to switch the conductivity of a graphene/MoS2/Au memristor stack using an STM tip. These results provide a path to further studies of atomically-thin memristors fabricated from heterostructures of two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs).

引用

页码：2609 / 2617

页数：9

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