Bismuth sulphide sensitized tin oxide photoelectrode for solar cell application

被引：3
|
作者：
Kulkarni, A. [1 ]
Arote, S. [2 ]
Pathan, H. [2 ]
Naushad, M. [3 ]
Patil, R. [1 ]
机构：
[1] PSGVPMs ASC Coll, Dept Phys, Shahada, India
[2] Savitribai Phule Pune Univ, Dept Phys, Adv Phys Lab, Pune, Maharashtra, India
[3] King Saud Univ, Dept Chem, Coll Sci, Bldg 5, Riyadh 11451, Saudi Arabia
来源：
INDIAN JOURNAL OF PHYSICS | 2016年 / 90卷 / 08期
关键词：
Bi2S3; Photosensitization; SnO2; Solar cell; BI2S3; THIN-FILMS; QUANTUM DOTS; OPTICAL-PROPERTIES; JUNCTION; EFFICIENCY; NANOWIRES; BEHAVIOR; GROWTH;
D O I：
10.1007/s12648-015-0822-5
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The present study demonstrates the chemical bath deposition of Bi2S3 over previously prepared porous photoanode of SnO2 for solar cell fabrication. Deposition of Bi2S3 onto SnO2 photoanode is carried out at 27 degrees C for 30, 60 and 120 m, showing structural modification and different Bi/S ratio with increase in deposition time. An enhancement in the optical absorbance is observed as a function of deposition time. The best photovoltaic performance is observed for the deposition time of 30 m. The obtained photovoltaic performance is correlated with the structural, optical and elemental analysis of the sensitized photoanodes, finding a qualitative role of recombination resistance in determining the photoconversion performance.
引用
收藏
页码：887 / 893
页数：7
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