The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

被引：19
|
作者：
Stockman, A. [1 ,2 ]
Tajalli, A. [3 ]
Meneghini, M. [3 ]
Uren, M. J. [4 ]
Mouhoubi, S. [2 ]
Gerardin, S. [3 ]
Bagatin, M. [3 ]
Paccagnella, A. [3 ]
Meneghesso, G. [3 ]
Zanoni, E. [3 ]
Moens, P. [2 ]
Bakeroot, B. [5 ]
机构：
[1] Univ Ghent, CMST, B-9052 Ghent, Belgium
[2] ON Semicond, B-9700 Oudenaarde, Belgium
[3] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy
[4] Univ Bristol, Ctr Device Thermog & Reliabil, Bristol BS8 1TL, Avon, England
[5] Univ Ghent, IMEC, CMST, B-9052 Ghent, Belgium
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 01期
关键词：
Gallium nitride (GaN); high-electronmobility transistor (HEMT); proton irradiation; dynamic ON-resistance; CARBON; HEMTS;
D O I：
10.1109/TED.2018.2881325
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Almost complete suppression of dynamic ON-resistance in AlGaN/GaN high-electron-mobility transistors is obtained by proton irradiation. In this paper, both small and large power transistors are characterized before and after 3-MeV proton irradiation at different fluences. The irradiated devices show a high robustness and for specific fluences unaltered threshold voltage and static ON-resistance. However, for fluences higher than 10(13) cm(-2), the dynamic ON-resistance is almost completely suppressed at 600 V and T = 150 degrees C. After irradiation, a measurable increase in OFF-state leakage current is observed, indicating an increase in the unintentionally doped (UID) GaN layer conductivity. We propose a technology computer-aided design supported model in which this conductivity increase leads to an increased deionization rate, ultimately reducing the dynamic ON-resistance.
引用
收藏
页码：372 / 377
页数：6
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