Addition effects of aluminum and in situ formation of alumina in MoSi2

被引:26
|
作者
Zhang, GJ [1 ]
Yue, XM
Watanabe, T
机构
[1] Kyushu Natl Ind Res Inst, Inorgan Composite Mat Dept, Tosu, Saga 8410052, Japan
[2] China Bldg Mat Acad, Beijing 100024, Peoples R China
基金
日本科学技术振兴机构;
关键词
D O I
10.1023/A:1004583625750
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Phase composition change and mechanical properties at room temperature of MoSi2 materials with the addition of aluminum were investigated. An explanation was given to the appearance of Mo5Si3 when hot pressing MoSi2 raw powder containing oxygen. The mechanical properties including Vickers hardness, bending strength and fracture toughness were improved with the addition of aluminum up to the limit content needed for absorbing the oxygen in MoSi2 raw powder. More aluminum addition than the limit content (in this study it is 5 wt %) will result in the formation of Mo(Si, Al)(2) and Si. The in situ formed Al2O3 could act as a crack pinning element. However, because the thermal expansion coefficients of Al2O3 and MoSi2 are near and there is a strong bonding between them, the toughening effect by such in situ formed small Al2O3 particles (less than 2 mu m) is limited. (C) 1999 Kluwer Academic Publishers.
引用
收藏
页码:997 / 1001
页数:5
相关论文
共 50 条
  • [21] On the high temperature oxidation of MoSi2 particles with boron addition
    Ding, Zhaoying
    Brouwer, Johannes C.
    Yao, Xiyu
    Zhu, Jia-Ning
    Hermans, Marcel J. M.
    Popovich, Vera
    Sloof, Willem G.
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2024, 44 (12) : 7170 - 7179
  • [22] Fabrication and characterization of TiCw/MoSi2 and SiCw/MoSi2 composites
    Sun, L
    Pan, HS
    MATERIALS LETTERS, 2002, 52 (03) : 223 - 228
  • [23] Effects of Co on the properties and microstructure of MoSi2
    Li, WX
    Xu, GZ
    Tang, R
    Tang, RZ
    Li, SR
    RARE METAL MATERIALS AND ENGINEERING, 1998, 27 (04) : 222 - 225
  • [24] ANNEALING EFFECTS ON SPUTTER DEPOSITED MOSI2
    MANTOVANI, S
    OTTOVIANI, G
    MAJNI, G
    NAVA, F
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C347 - C347
  • [25] EFFECTS OF IMPURITIES ON THE OXIDATION OF MOSI2 ON SILICON
    WAKITA, AS
    SIGMON, TW
    GIBBONS, JF
    APPLIED PHYSICS LETTERS, 1984, 45 (02) : 140 - 142
  • [26] Fabrication and characterization of TiCw/MoSi2 and SiCw/MoSi2 composites
    Sun, L
    Pan, JS
    MATERIALS LETTERS, 2002, 53 (1-2) : 63 - 67
  • [27] Formation of a wear resistant surface on Al by laser aided in-situ synthesis of MoSi2
    Ghosh, K
    McCay, MH
    Dahotre, NB
    JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 1999, 88 (1-3) : 169 - 179
  • [28] ELECTRONIC-STRUCTURE AND FORMATION OF MOSI2 SILICIDES
    LI, BQ
    JI, MR
    WU, JX
    HSU, CC
    YIAN, J
    CHINESE PHYSICS-ENGLISH TR, 1990, 10 (02): : 481 - 487
  • [29] REFRACTORY MOSI2 AND MOSI2 POLYSILICON BULK CMOS CIRCUITS
    CHOW, TP
    STECKL, AJ
    JERDONEK, RT
    ELECTRON DEVICE LETTERS, 1982, 3 (02): : 37 - 40
  • [30] FORMATION OF MOSI2 BY LIGHT-PULSE IRRADIATION
    URWANK, P
    WIESER, E
    HASSNER, A
    KAUFMANN, C
    LIPPMANN, H
    MELZER, I
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1985, 90 (02): : 463 - 468