Modelling of multijunction solar cells with dilute nitride n-i-p-i junctions

被引：6

作者：

Royall, B. ^{[1
]}

Balkan, N. ^{[1
]}

机构：

[1] Univ Essex, Sch Comp Sci & Elect Engn, Colchester CO4 3SQ, Essex, England

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2011年 / 248卷 / 05期

关键词：

dilute nitrides; doping superlattice; GaInNAs; multijunction; solar cells;

D O I：

10.1002/pssb.201000787

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We are proposing a novel structure containing GaInNAs n-i-p-i layers with a band gap of 1 eV connected in series to a GaInP/GaAs tandem structure. The device performance is modelled using the drift diffusion conductivity model where the number and thickness of the layers are taken as adjustable parameters to achieve the optimum design. We obtain the value of short-circuit current to keep the n-i-p-i cell current matched to the other junctions in the tandem structure. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1203 / 1206

页数：4

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