Low-temperature formation of device-quality SiO2/Si interfaces using electron cyclotron resonance plasma-enhanced chemical vapor deposition

Low-temperature formation of SiO2/Si inter-faces using electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (PECVD) was investigated. It was found that the density of interface trap states (D-it) decreased with decreasing substrate temperature during film deposition and performing the post deposition annealing at 333 degreesC in N-2 or H2O atmosphere. The average D-it was 3 to 4 x 10(11) cm(-2) eV(-1) when the substrate temperature was 300 degreesC, while decreasing the substrate temperature to room temperature decreased it to 1.8 x 10(10) cm(-2) eV(-1). These results indicate that device-quality-SiO2/Si-interface formation is possible using low-temperature processes of ECR PECVD and post deposition annealing.