Retention of Charge in TiO2 Nanoparticles/SiOx Thin Film System

The glancing angle deposition technique has been carried out to synthesize TiO2 nanoparticles (NPs) on SiOx thin film (TF) over n-type Si substrate. The deposition rates were 1.2 angstrom s(-1) for both SiOx and TiO2. The sample was characterized by Atomic Force Microscopy. EDAX analysis projects the emission from Ti K alpha 1, O-2 K alpha 1 and Si K alpha 1 shells in the sample. The junction capacitance and conductance was measured to investigate the charge retention that occurs due to presence of trap states in the device and the interface trap density (Dit) for the TiO(2)NPs was found to be 50 x 10(19) eV(-1)cm(-2).