Retention of Charge in TiO2 Nanoparticles/SiOx Thin Film System

被引：2
|
作者：
Chakrabartty, S. [1 ]
Mondal, A. [2 ]
Saha, A. K. [3 ]
机构：
[1] Natl Inst Technol, Dept Elect & Commun Engn, Agartala 799046, India
[2] Natl Inst Technol, Dept Phys, Durgapur 713209, India
[3] Natl Inst Technol, Dept Math, Agartala 799046, India
来源：
ADVANCED SCIENCE LETTERS | 2016年 / 22卷 / 01期
关键词：
TiO2; NPs; Charge Trapping; Schottky Contact;
D O I：
10.1166/asl.2016.6801
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
The glancing angle deposition technique has been carried out to synthesize TiO2 nanoparticles (NPs) on SiOx thin film (TF) over n-type Si substrate. The deposition rates were 1.2 angstrom s(-1) for both SiOx and TiO2. The sample was characterized by Atomic Force Microscopy. EDAX analysis projects the emission from Ti K alpha 1, O-2 K alpha 1 and Si K alpha 1 shells in the sample. The junction capacitance and conductance was measured to investigate the charge retention that occurs due to presence of trap states in the device and the interface trap density (Dit) for the TiO(2)NPs was found to be 50 x 10(19) eV(-1)cm(-2).
引用
收藏
页码：141 / 144
页数：4
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