High-performance HfOx/AlOy-based resistive switching memory cross-point array fabricated by atomic layer deposition

被引：19
|
作者：
Chen, Zhe [1 ]
Zhang, Feifei [1 ]
Chen, Bing [1 ]
Zheng, Yang [1 ]
Gao, Bin [1 ]
Liu, Lifeng [1 ]
Liu, Xiaoyan [1 ]
Kang, Jinfeng [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
NANOSCALE RESEARCH LETTERS | 2015年 / 10卷
关键词：
RRAM; Cross-point array; Atomic layer deposition (ALD); PARAMETER VARIATION; RRAM; OPERATION; DEVICE; RERAM; RETENTION; MODEL;
D O I：
10.1186/s11671-015-0738-1
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Resistive switching memory cross-point arrays with TiN/HfOx/AlOy/Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfOx and 3-nm AlOy were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfOx/AlOy bi-layers for the application of next-generation nonvolatile memory.
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页数：7
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