High-performance HfOx/AlOy-based resistive switching memory cross-point array fabricated by atomic layer deposition

被引：19

作者：

Chen, Zhe ^{[1
]}

Zhang, Feifei ^{[1
]}

Chen, Bing ^{[1
]}

Zheng, Yang ^{[1
]}

Gao, Bin ^{[1
]}

Liu, Lifeng ^{[1
]}

Liu, Xiaoyan ^{[1
]}

Kang, Jinfeng ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2015年 / 10卷

关键词：

RRAM; Cross-point array; Atomic layer deposition (ALD); PARAMETER VARIATION; RRAM; OPERATION; DEVICE; RERAM; RETENTION; MODEL;

D O I：

10.1186/s11671-015-0738-1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Resistive switching memory cross-point arrays with TiN/HfOx/AlOy/Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfOx and 3-nm AlOy were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfOx/AlOy bi-layers for the application of next-generation nonvolatile memory.

引用

页数：7

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