Organic nonvolatile memory devices fabricated by using an inkjet printing method

被引：5
|
作者：
Yang, Yong Suk [1 ]
Koo, Jae Bon [1 ]
You, In-Kyu [1 ]
机构：
[1] Elect & Telecommun Res Inst, Taejon 305350, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2012年 / 60卷 / 10期
关键词：
Organic memory device; Inkjet printing; Ag ink; Switching; Bipolar; THIN-FILM; CELLS;
D O I：
10.3938/jkps.60.1504
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We are developing inkjet printing as a low cost, high throughput approach to the fabrication of single-layer organic memory devices. The organic memory devices were composed of a poly (Nvinylcarbazole) (PVK) film with Ag nanoparticles (NPs). The inkjet printing was introduced to embed Ag NPs in the PVK film. The organic memory devices exhibited the behavior of a resistive random access memory and on/off switching ratios of 103. This value was obtained through postannealing at 150 A degrees C. The current-voltage characteristics of the devices revealed rewritable and bipolar memory effects during several sweeps of the voltage.
引用
收藏
页码：1504 / 1507
页数：4
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