SiC Nanowire Field-Effect Transistors Based on Dielectrophoresis

被引：0

作者：

Dai, Zhenqing ^{[1
]}

Zhang, Liying ^{[1
]}

Chen, Haiyan ^{[1
]}

Wei, Liangming ^{[1
]}

Xu, Dong ^{[1
]}

Zhang, Yafei ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Natl Key Lab Nano Micro Fabricat Technol, Key Lab Thin Film & Microfabricat, Res Inst Micro Nano Sci & Technol,Minist Educ, Shanghai 200030, Peoples R China

来源：

2010 INTERNATIONAL CONFERENCE ON INFORMATION, ELECTRONIC AND COMPUTER SCIENCE, VOLS 1-3 | 2010年

关键词：

SiC; NWFETs; dielectrophoresis; SILICON-CARBIDE;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Field-effect transistors (FETs) based on SiC nanowires (SiC NWFETs) are believed as the most promising nanodevices worked in high temperature and high power. In this paper, dielectrophoresis was used to align SiC nanowires. Moreover, SiC NWFETs based on an aligned single nanowire were obtained. The electrical properties of the SiC NWFETs were investigated with Agilent semiconductor parameter analyzer. The result of the measurement shows that the contact between Au electrodes and SIC nanowires is nearly ohmic contact.

引用

页码：1710 / 1712

页数：3

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