Excitation of high-intensity laser radiation of semiconductor targets by a subnanosecond electron beam

The results of the excitation of DdS semiconductor targets by a subnanosecond electron beam (EB) with an electron energy of 60-230 keV are presented. The maximum intensity of laser radiation from targets for a 1-mm EB diameter exceeded 10(7) W/cm(2) at an efficiency of 10%. Lasing was initiated at the leading edge of the EB current; laser radiation then reproduced the shape of the excitation pulse. At low excitation levels, a single-mode lasing regime with the wavelength lambda = 522 nm was observed. The maximum power of laser radiation (10 MW) was achieved on a multielement CdS semiconductor target. The duration of laser pulses changed in the range of 100-500 ps.