Controlled fabrication of metallic electrodes with atomic separation

被引:279
|
作者
Morpurgo, AF [1 ]
Marcus, CM
Robinson, DB
机构
[1] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
关键词
D O I
10.1063/1.123765
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report a technique for fabricating metallic electrodes on insulating substrates with separations on the 1 nm scale. The fabrication technique, which combines lithographic and electrochemical methods, provides atomic resolution without requiring sophisticated instrumentation. The process is simple, controllable, reversible, and robust, allowing rapid fabrication of electrode pairs with high yield. We expect the method to prove useful in interfacing molecular-scale structures to macroscopic probes and electronic devices. (C) 1999 American Institute of Physics. [S0003-6951(99)04614-8].
引用
收藏
页码:2084 / 2086
页数:3
相关论文
共 50 条
  • [31] Fabrication of metallic tunnel junctions for the scanning single electron transistor atomic force microscope
    Steinmann, P
    Lister, KA
    Weaver, JMR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (05): : 2138 - 2141
  • [32] Atomic force microscopy probes with integrated boron doped diamond electrodes: Fabrication and application
    Eifert, Alexander
    Smirnov, Waldemar
    Frittmann, Stefan
    Nebel, Christoph
    Mizaikoff, Boris
    Kranz, Christine
    ELECTROCHEMISTRY COMMUNICATIONS, 2012, 25 : 30 - 34
  • [33] Fabrication of metallic nanostructures by atomic force microscopy nanomachining and lift-off process
    Hsu, JH
    Lin, CY
    Lin, HN
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (06): : 2768 - 2771
  • [34] Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
    Karbasian, Golnaz
    Orlov, Alexei O.
    Snider, Gregory L.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 33 (06):
  • [35] CONTROLLED ATOMIC LAYER DOPING AND ALD MOSFET FABRICATION IN Si.
    van Gorkum, Aart A.
    Nakagawa, Kiyokazu
    Shiraki, Yasuhiro
    Japanese Journal of Applied Physics, Part 2: Letters, 1987, 26 (12): : 1933 - 1936
  • [36] CONTROLLED ATOMIC LAYER DOPING AND ALD-MOSFET FABRICATION IN SI
    VANGORKUM, AA
    NAKAGAWA, K
    SHIRAKI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (12): : L1933 - L1936
  • [37] Electrochemical fabrication of atomically thin metallic wires and electrodes separated with molecular-scale gaps
    He, HX
    Boussaad, S
    Xu, BQ
    Li, CZ
    Tao, NJ
    JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 2002, 522 (02) : 167 - 172
  • [38] FABRICATION AND PROPERTIES OF EPITAXIAL FERROELECTRIC HETEROSTRUCTURES WITH (SRRUO3) ISOTROPIC METALLIC OXIDE ELECTRODES
    EOM, CB
    VANDOVER, RB
    PHILLIPS, JM
    WERDER, DJ
    MARSHALL, JH
    CHEN, CH
    CAVA, RJ
    FLEMING, RM
    FORK, DK
    APPLIED PHYSICS LETTERS, 1993, 63 (18) : 2570 - 2572
  • [39] Fabrication of Metallic Nanomesh: Pt Nano-Mesh as a Proof of Concept for Stretchable and Transparent Electrodes
    Jang, Ho Young
    Lee, Seoung-Ki
    Cho, Sang Hyun
    Ahn, Jong-Hyun
    Park, Sungho
    CHEMISTRY OF MATERIALS, 2013, 25 (17) : 3535 - 3538
  • [40] "Drill and fill" lithography for controlled fabrication of 3D platinum electrodes
    Rauf, Sakandar
    Shiddiky, Muhammad J. A.
    Trau, Matt
    SENSORS AND ACTUATORS B-CHEMICAL, 2013, 185 : 543 - 547