Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

被引:27
|
作者
Tsai, Yu-Lin [1 ,2 ,3 ]
Lai, Kun-Yu [4 ]
Lee, Ming-Jui [4 ]
Liao, Yu-Kuang [2 ,3 ]
Ooi, Boon S. [1 ]
Kuo, Hao-Chung [2 ,3 ]
He, Jr-Hau [1 ]
机构
[1] King Abdullah Univ Sci & Technol, Comp Elect & Math Sci & Engn CEMSE Div, Thuwal 239556900, Saudi Arabia
[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan
[4] Natl Cent Univ, Dept Opt & Photon, Chungli 320, Taiwan
关键词
LIGHT-EMITTING-DIODES; ZNO NANOROD ARRAYS; WELL SOLAR-CELLS; PATTERNED SAPPHIRE SUBSTRATE; SINGLE-CRYSTALLINE GAN; MULTIPLE-QUANTUM WELLS; EXTRACTION ENHANCEMENT; ABSORPTION ENHANCEMENT; PHOTOVOLTAIC CELLS; INDIUM-CONTENT;
D O I
10.1016/j.pquantelec.2016.08.001
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1 / 25
页数:25
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