Electric-field-induced insulator to Coulomb glass transition via oxygen-vacancy migration in Ca-doped BiFeO3

被引:23
|
作者
Lim, Ji Soo [1 ]
Lee, Jin Hong [1 ]
Ikeda-Ohno, Atsushi [2 ]
Ohkochi, Takuo [3 ]
Kim, Ki-Seok [4 ]
Seidel, Jan [5 ]
Yang, Chan-Ho [1 ,6 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Phys, Daejeon 34141, South Korea
[2] Helmholtz Zentrum Dresden Rossendorf, Inst Resource Ecol, Bautzner Landstr 400, D-01328 Dresden, Germany
[3] SPring 8, Japan Synchrotron Radiat Res Inst, Sayo, Hyogo 6795198, Japan
[4] POSTECH, Dept Phys, Pohang 790784, Gyeongbuk, South Korea
[5] Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
[6] Korea Adv Inst Sci & Technol, Inst NanoCentury, Daejeon 34141, South Korea
基金
澳大利亚研究理事会; 新加坡国家研究基金会;
关键词
LA1-XSRXFEO3; OXIDES; PHOTOEMISSION; CONDUCTION; STATE;
D O I
10.1103/PhysRevB.94.035123
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The multiferroic BiFeO3 (BFO) as a charge-transfer-type insulator is an interesting system in which to explore correlated electronic conduction. Here, we substitute divalent Ca ions into the parent BFO and apply an external electric field at elevated temperatures to spatially redistribute spontaneously created oxygen vacancies, thereby generating hole carriers in regions of less dense oxygen-vacancy concentrations. X-ray diffraction and photoemission spectroscopic measurement are employed to quantify a large variation of local oxygen-vacancy concentration, as much as similar to 10(21) cm(-3), and explore the consequent evolution of electronic band structure. We find that a nonrigid polaronic band is created by hole doping as a result of a strong electron-lattice coupling. We also show strong evidence for the disorder-driven formation of a Coulomb-glass state through electronic transport measurements on a quantitative level. These spectroscopic and transport results can be combined and understood in the framework of intrinsic spatial inhomogeneity of the polaronic charge density. The finding not only offers a promising platform and methodology for examining the interplay of functional defects and correlated electronic behaviors, but also suggests a unique electronic conduction mechanism applicable to systems with coexistence of strong electron correlation, electron-lattice interaction, and randomness beyond the Coulomb-glass physics in semiconductors.
引用
收藏
页数:9
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