RESET CURRENT DISTRIBUTIONS IN PHASE CHANGE MEMORIES

被引：1
|
作者：
Calderoni, A. [1 ]
Ferro, M. [2 ]
Ventrice, D. [1 ]
Ielmini, D. [2 ]
Fantini, P. [1 ]
机构：
[1] Numonyx, R&D Technol Dev, Via Olivetti 2, I-20041 Milan, Italy
[2] Polytech Milano IUNET, Dip Elect & Informat, I-32201 Milan, Italy
来源：
2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2010年
关键词：
Phase Change Memories (PCM); Non-Volatile Memory modeling; variability effects; chalcogenide; reliability modeling; RESISTANCE; DRIFT;
D O I：
10.1109/IRPS.2010.5488740
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work a new analytical transport model for the readout region of amorphous GST is proposed. The model is employed to assess, through Monte Carlo (MC) simulations, the sources of variability responsible for the width and shape of the readout current distributions of reset bits. The correlation between transport mechanisms and the statistical spread is highlighted, also considering the reset pulses dependence. Furthermore, the temperature effect on the reset bits is addressed. The statistical characterization results are discussed within the framework of the proposed model.
引用
收藏
页码：738 / 742
页数：5
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