On the apparent mobility in nanometric n-MOSFETs

被引：45

作者：

Zilli, M. ^{[1
]}

Esseni, D. ^{[1
]}

Palestri, P. ^{[1
]}

Selmi, L. ^{[1
]}

机构：

[1] Univ Udine, Dipartimento Ingn Elettr Gest & Maccan, I-33100 Udine, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 11期

关键词：

ballistic transport; characterization and simulation; mobility; multisubband Monte Carlo (MSMC);

D O I：

10.1109/LED.2007.907553

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter investigates the definition and determination of mobility in nanometric metal-oxide-semiconductor transistors by means of multisubband Monte Carlo simulations. Our results clearly show that the transport in nano-MOSFETs, even for very small V-DS, is far from being uniform and local. Consequently, the apparent mobility extracted from the experiments is a channel-length-dependent quantity, which is only partly related to the uniform transport mobility. Our study comprises both the electrical and magnetoresistance mobility.

引用

页码：1036 / 1039

页数：4

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