Design and Fabrication of Terahertz Extended Interaction Klystrons

被引:0
|
作者
Dobbs, Richard [1 ]
Roitman, Albert [1 ]
Horoyski, Peter [1 ]
Hyttinen, Mark [1 ]
Sweeney, Dan [1 ]
Steer, Brian [1 ]
Khanh Nguyen [3 ]
Wright, Edward [3 ]
Chernin, David [2 ]
Burke, Alex [2 ]
Calame, Jeffrey [4 ]
Levush, Baruch [4 ]
Barker, N. Scott [5 ]
Booske, John [6 ]
Blank, Monica [7 ]
机构
[1] Commun & Power Ind Canada Inc, Georgetown, ON L7G 2J4, Canada
[2] Sci Applicat Int Corp, Mclean, VA 22102 USA
[3] Beam Wave Res Inc, Bethesda, MD 20814 USA
[4] Naval Res Lab, Washington, DC 20375 USA
[5] Univ Virginia, Charlottesville, VA 22904 USA
[6] Univ Wisconsin, Madison, WI 53715 USA
[7] Commun & Power Ind, Palo Alto, CA 94304 USA
关键词
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The development of new terahertz power amplifiers at 0.67, 0.85 and 1.03 THz presents significant challenges in both design and fabrication. This paper describes the design challenges and methodology, an outline design of the new device and an analysis of fabrication techniques considered.
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页数:3
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