共 50 条
- [31] The growth mechanism of SiC film on a Si(111)-(7x7) surface by C60 precursor studied by photoelectron spectroscopy JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (7B): : 4536 - 4539
- [32] Photoemission spectroscopy study of the interface formation in organic thin film transistors ORGANIC LIGHT-EMITTING MATERIALS AND DEVICES VI, 2002, 4800 : 192 - 199
- [33] THE CU/AG(111) INTERFACE STUDIED BY ELECTRON-ENERGY LOSS FINE-STRUCTURE SPECTROSCOPY PHYSICA B, 1989, 158 (1-3): : 666 - 667
- [35] Evolution of the electronic structure at the interface between a thin film of halogenated phthalocyanine and the Ag(111) surface JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (23): : 8654 - 8661
- [36] COPPER PHTHALOCYANINE(CuPc) GROWTH ON H-Si(111) AND METAL INTERFACE FORMATION STUDIED USING IN SITU RAMAN SPECTROSCOPY EPIOPTICS-10: PROCEEDINGS OF THE 43RD COURSE OF THE INTERNATIONAL SCHOOL OF SOLID STATE PHYSICS, 2010, 31 : 69 - 74
- [38] Early stages of formation of the Ag-Ni(111) interface studied by grazing incidence x-ray diffraction and x-ray photoelectron diffraction PHYSICAL REVIEW B, 2011, 84 (16):
- [39] Interface-layer formation mechanism in a-Si:H thin-film growth studied by real-time spectroscopic ellipsometry and infrared spectroscopy PHYSICAL REVIEW B, 1999, 60 (19): : 13598 - 13604