Effects of spin diffusion on electron spin relaxation time measured with a time-resolved microscopic photoluminescence technique

被引:2
|
作者
Ikeda, Kazuhiro [1 ]
Kawaguchi, Hitoshi [1 ]
机构
[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan
关键词
QUANTUM-WELLS; GAAS; SEMICONDUCTORS; TRANSPORT; DYNAMICS;
D O I
10.1063/1.4906847
中图分类号
O59 [应用物理学];
学科分类号
摘要
We performed measurements at room temperature for a GaAs/AlGaAs multiple quantum well grown on GaAs(110) using a time-resolved microscopic photoluminescence (micro-PL) technique to find what effects spin diffusion had on the measured electron spin relaxation time, tau(s), and developed a method of estimating the spin diffusion coefficient, Ds, using the measured data and the coupled drift-diffusion equations for spin polarized electrons. The spatial nonuniformities of ss and the initial degree of electron spin polarization caused by the pump intensity distribution inside the focal spot were taken into account to explain the dependence of tau(s) on the measured spot size, i.e., a longer tau(s) for a smaller spot size. We estimated D-s as similar to 100 cm(2)/s, which is similar to a value reported in the literature. We also provided a qualitative understanding on how spin diffusion lengthens tau(s) in micro-PL measurements. (C) 2015 AIP Publishing LLC.
引用
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页数:6
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