Nanostructured ZnO thin film with improved optical and electrochemical properties prepared by hydrothermal electrochemical deposition technique

被引：11
|
作者：
Biswas, Indranil [1 ]
Majumder, Mousumi [1 ]
Roy , Piyali [1 ]
Mukherjee, Debadrita [1 ]
Chakraborty, Ashim Kumar [1 ]
机构：
[1] CSIR Cent Glass & Ceram Res Inst, Mat Characterizat & Instrumentat Div, Kolkata 700032, India
来源：
MICRO & NANO LETTERS | 2016年 / 11卷 / 07期
关键词：
nanostructured materials; zinc compounds; II-VI semiconductors; wide band gap semiconductors; semiconductor growth; nanofabrication; electrodeposition; photoelectrochemistry; carrier density; photoconductivity; current density; semiconductor thin films; ultraviolet spectra; visible spectra; nanostructured zinc oxide thin films; optical properties; electrochemical properties; hydrothermal electrochemical deposition technique; fluorine-doped tin oxide coated glass substrate; acidic aqueous zinc acetate solution; n-type behaviour; carrier concentration; steady state photocurrent density; UV irradiation; visible light illumination; zero bias potential; photoelectrochemical properties; HTED technique; temperature; 80; degC; ZnO; SnO2:F-SiO2; LUMINESCENCE; TRANSPORT; DYE;
D O I：
10.1049/mnl.2015.0528
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Zinc oxide (ZnO) thin films were grown on fluorine-doped tin oxide coated glass substrate by the hydrothermal electrochemical deposition (HTED) route using slightly acidic aqueous zinc acetate solution at 80 degrees C and were characterised by various techniques. The deposited films showed n-type behaviour with improved carrier concentration. The steady state photocurrent densities were found to be 0.4 mA/cm(2) (under UV irradiation) and 8 mu A/cm(2) (under visible light illumination) at zero bias potential. Significant improvement of optical, electrochemical and photoelectrochemical properties of deposited films could be achieved using HTED technique.
引用
收藏
页码：351 / 355
页数：5
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