Synergistic Effect of Chemical Substitution and Insertion on the Thermoelectric Performance of Cu26V2Ge6S32 Colusite

被引:7
|
作者
Shimizu, Yuta [1 ]
Suekuni, Koichiro [1 ,8 ]
Saito, Hikaru [2 ]
Lemoine, Pierric [3 ]
Guilmeau, Emmanuel [4 ]
Raveau, Bernard [4 ]
Chetty, Raju [5 ,6 ]
Ohta, Michihiro [5 ]
Takabatake, Toshiro [7 ]
Ohtaki, Michitaka [1 ,8 ]
机构
[1] Kyushu Univ, Interdisciplinary Grad Sch Engn Sci, Kasuga, Fukuoka 8168580, Japan
[2] Kyushu Univ, Inst Mat Chem & Engn, Kasuga, Fukuoka 8168580, Japan
[3] Univ Rennes 1, CNRS, ISCR UMR 6226, F-35000 Rennes, France
[4] Normandie Univ, UNICAEN, ENSICAEN, CNRS,CRISMAT, F-14000 Caen, France
[5] Natl Inst Adv Ind Sci & Technol, Global Zero Emiss Res Ctr GZR, Tsukuba, Ibaraki 3058569, Japan
[6] Natl Inst Mat Sci NIMS, Int Ctr Mat Nanoarchitecton WPI MANA, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[7] Hiroshima Univ, Grad Sch Adv Sci & Engn, Higashihiroshima 7398530, Japan
[8] Kyushu Univ, Transdisciplinary Res & Educ Ctr Green Technol, Kasuga, Fukuoka 8168580, Japan
关键词
CRYSTAL-STRUCTURE; POWER FACTOR; ENHANCEMENT; KEY; SN; TA; NB; NI;
D O I
10.1021/acs.inorgchem.1c01321
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Copper-based sulfides are promising materials for thermoelectric applications, which can convert waste heat into electricity. This study reports the enhanced thermoelectric performance of Cu26V2Ge6S32 colusite via substitution of antimony (Sb) for germanium (Ge) and introduction of copper (Cu) as an interstitial atom. The crystal structure of the solid solutions and Cu-rich compounds were analyzed by powder X-ray diffraction and scanning transmission electron microscopy. Both chemical approaches decrease the hole carrier concentration, which leads to a reduction in the electronic thermal conductivity while keeping the thermoelectric power factor at a high value. Furthermore, the interstitial Cu atoms act as phonon scatterers, thereby decreasing the lattice thermal conductivity. The combined effects increase the dimensionless thermoelectric figure of merit ZT from 0.3 (Cu26V2Ge6S32) to 0.8 (Cu29V2Ge5SbS32) at 673 K.
引用
收藏
页码:11364 / 11373
页数:10
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