Molecular charge-transfer interaction with single-layer graphene

被引:29
|
作者
Late, Dattatray J. [1 ,2 ]
Ghosh, Anupama [1 ,2 ,3 ]
Chakraborty, Biswanath [4 ]
Sood, A. K. [4 ]
Waghmare, Umesh V. [5 ]
Rao, C. N. R. [1 ,2 ,3 ]
机构
[1] Jawaharlal Nehru Ctr Adv Sci Res, Int Ctr Mat Sci, Bangalore 560064, Karnataka, India
[2] Jawaharlal Nehru Ctr Adv Sci Res, CSIR, Ctr Excellence Chem, Bangalore 560064, Karnataka, India
[3] Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India
[4] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
[5] Jawaharlal Nehru Ctr Adv Sci Res, Theoret Sci Unit, Bangalore 560064, Karnataka, India
关键词
graphene; doping; Raman spectroscopy; TRANSISTOR; GAS;
D O I
10.1080/17458080.2010.529174
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
While the effect of electrochemical doping on single-layer graphene (SG) with holes and electrons has been investigated, the effect of charge-transfer doping on SG has not been examined hitherto. Effects of varying the concentration of electron donor and acceptor molecules such as tetrathiafulvalene (TTF) and tetracyanoethylene (TCNE) on SG produced by mechanical exfoliation as well as by the reduction of single-layer graphene oxide have been investigated. TTF softens the G-band in the Raman spectrum, whereas TCNE stiffens the G-band. The full-width-at-half-maximum of the G-band increases on interaction with both TTF and TCNE. These effects are similar to those found with few-layer graphene, but in contrast to those found with electrochemical doping. A common feature between the two types of doping is found in the case of the 2-D band, which shows softening and stiffening on electron and hole doping, respectively. The experimental results are explained on the basis of the frequency shifts, electron-phonon coupling and structural inhomogeneities that are relevant to molecule-graphene interaction.
引用
收藏
页码:641 / 651
页数:11
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