Photoelastic waveguides in SiGe/Si heterostructures and bulk Si

被引：0

作者：

Lea, E ^{[1
]}

Weiss, BL ^{[1
]}

Rho, H ^{[1
]}

Jackson, HE ^{[1
]}

机构：

[1] Univ Surrey, Sch Elect Engn Informat Technol & Math, Guildford GU2 5XH, Surrey, England

来源：

MATERIALS AND DEVICES FOR SILICON-BASED OPTOELECTRONICS | 1998年 / 486卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoelastic waveguides in bulk Si and SiGe/Si heterostructures have been modelled and characterised. The calculated transverse strain profiles of photoelastic waveguide structures in SiGe/Si heterostructures and bulk silicon are in good agreement with those obtained by microRaman experiments. The waveguide characteristics are also found to be in good agreement with those obtained from the strain modelling and demonstrate that low loss waveguides can be fabricated using these structures.

引用

页码：95 / 100

页数：6

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