Electrical Detection of Singlet Fission in Single Crystal Tetracene Transistors

被引：13

作者：

Jang, Hyuk-Jae ^{[1
,2
,3
]}

Bittle, Emily G. ^{[2
]}

Zhang, Qin ^{[1
,2
]}

Biacchi, Adam J. ^{[2
]}

Richter, Curt A. ^{[2
]}

Gundlach, David J. ^{[2
]}

机构：

[1] Theiss Res, La Jolla, CA 92037 USA

[2] NIST, Nanoscale Device Characterizat Div, 100 Bur Dr, Gaithersburg, MD 20899 USA

[3] Western Digital Corp, 5601 Great Oaks Pkwy, San Jose, CA 95119 USA

来源：

ACS NANO | 2019年 / 13卷 / 01期

关键词：

single crystalline organic semiconductors; singlet fission; magnetoconductance; organic field effect transistors; FIELD-EFFECT TRANSISTORS; MAGNETIC-FIELD; EXCITON-FISSION; TRIPLET EXCITONS; PHOTOGENERATION; FLUORESCENCE; DYNAMICS; CARRIERS;

D O I：

10.1021/acsnano.8b07625

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present the electrical detection of singlet fission in tetracene by using a field-effect transistor (FET). Singlet fission is a photoinduced spin-dependent process, yielding two triplet excitons from the absorption of a single photon. In this study, we engineered a more deterministic platform composed of an organic single crystal FET rather than amorphous or polycrystalline FETs to elucidate spin dependent processes under magnetic fields. Despite the unipolar operation and relatively high mobility of single crystal tetracene FETs, we were able to manipulate spin dependent processes to detect magnetoconductance (MC) at room temperature by illuminating the FETs and tuning the bias voltage to adjust majority charge carrier density and trap occupancy. In considering the crystalline direction and magnetic field interactions in tetracene, we show the MC response observed in tetracene FETs to be the result of the singlet fission process.

引用

页码：616 / 623

页数：8

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