High-resolution 3D X-ray Microscopy for Structural Inspection and Measurement of Semiconductor Package Interconnects

被引：0

作者：

Syahirah, Mohammad-Zulkifli ^{[1
]}

Bernice, Zee ^{[1
]}

Gregorich, Thomas ^{[2
]}

Gu, Allen ^{[2
]}

Yang, YanJing ^{[2
]}

Terada, Masako ^{[2
]}

Lee, Weijie ^{[3
]}

机构：

[1] Adv Micro Devices Singapore Pte Ltd, 508 Chai Chee Lane, Singapore 469032, Singapore

[2] Carl Zeiss SMT Inc, 4385 Hopyard Rd,Suite 100, Pleasanton, CA 94588 USA

[3] Nanyang Technol Univ, Sch Mat Sci & Engn, 11 Fac Ave, Singapore 639977, Singapore

来源：

2019 IEEE 26TH INTERNATIONAL SYMPOSIUM ON PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2019年

关键词：

D O I：

10.1109/ipfa47161.2019.8984854

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

3D X-ray Microscopy (XRM) has become an established failure analysis (FA) tool for bridging fault isolation and physical failure analysis (PFA) because it enables the visualization of defects without destroying the device under test (DUT). Through workflow improvements, it offers the opportunity to improve process characterization and device qualifications. This paper describes the application of new automated scanning and image acquisition capability for repetitive XRM device inspection in defined regions of interest (ROI). Results obtained from two test matrices showed good positioning repeatability meeting accuracy requirements for both small and medium-sized test vehicles with fast acquisition times.

引用

页数：4

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