Influence of electron irradiation on carrier recombination and intradot relaxation in InGaAs/GaAs quantum dot structures

被引：1

作者：

Sobolev, NA ^{[1
]}

Cavaco, A ^{[1
]}

Carmo, MC ^{[1
]}

Born, H ^{[1
]}

Grundmann, M ^{[1
]}

Heinrichsdorff, F ^{[1
]}

Heitz, R ^{[1
]}

Hoffmann, A ^{[1
]}

Bimberg, D ^{[1
]}

机构：

[1] Univ Aveiro, Dept Phys, P-3810193 Aveiro, Portugal

来源：

PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES TO NANOMEETING-2001 | 2001年

关键词：

D O I：

10.1142/9789812810076_0023

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The influence of high-energy electron irradiation on the time-resolved photoluminescence (PL) of quantum dot (QD) and quantum well (QW) InGaAs/GaAs structures are investigated. Both rise and decay kinetics is changed due to radiation-induced defects. The decay kinetics of as-grown QWs and QDs can be described by a single time constant. The irradiated QWs still exhibit the single exponential decay but with the less time constant, whereas the second faster component appears in the PL decay of QDs along with the component present prior to irradiation. Thus, we observed interaction of confined carriers with radiation-induced defects inside or near the QDs.

引用

页码：146 / 149

页数：4

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