Photoreflectance spectroscopy of vertically coupled InGaAs/GaAs double quantum dots

被引：30
|
作者：
Sek, G
Ryczko, K
Misiewicz, J
Bayer, M
Klopf, F
Reithmaier, JP
Forchel, A
机构：
[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
[2] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
来源：
SOLID STATE COMMUNICATIONS | 2001年 / 117卷 / 07期
关键词：
nanostructures; semiconductors; electronic states (localized); photoreflectance spectroscopy;
D O I：
10.1016/S0038-1098(00)00490-7
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Photoreflectance and high excitation photoluminescence spectra have been measured at 10 K for In0.6Ga0.4As/GaAs double quantum dot structures with various thicknesses of the GaAs separating layer. Several transitions between split states, due to the dot-dot and wetting layer well-well interaction, have been observed. The transitions have been identified using the results of the effective mass approximation calculations for double quantum wells and lens-shaped double quantum dots. The splitting energy of the quantum dot transitions has been obtained as function of the GaAs barrier width. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：401 / 406
页数：6
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