Design and characterisation of singly balanced silicon carbide Schottky diode high-level mixer

被引：8
|
作者：
Eriksson, J [1 ]
Rorsman, N [1 ]
Ferdos, F [1 ]
Zirath, H [1 ]
机构：
[1] Chalmers Univ Technol, Dept Microelect, Microwave Elect Lab, SE-41296 Gothenburg, Sweden
来源：
ELECTRONICS LETTERS | 2001年 / 37卷 / 01期
关键词：
D O I：
10.1049/el:20010004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A singly balanced silicon carbide Schottky diode mixer was designed and characterised. The mixer has a minimum conversion loss of 5.2dB and a third-order intermodulation input intercept point of 31dBm at 850MHz.
引用
收藏
页码：54 / 55
页数：2
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